Applied Materials Inc.

Endura ALPS PVD (ALPS Co Ni): Endura ALPS (Advanced Low-Pressure Source) Cobalt PVD (Physical Vapor Deposition) system presents a high-efficiency silicide solution for gate and contact applications within high aspect ratio structures. Endura Amber PVD: It ensures the filling of copper within interconnect trench and via structures holds paramount importance for device reliability in microelectronic manufacturing. Endura Avenir RF PVD: The Endura Avenir RF PVD technology caters to high k/metal gate applications and logic contact silicidation, extending its reach to 22nm and beyond. Endura Cirrus HT Co PVD: The Endura Cirrus HT Co PVD system enables the delivery of necessary silicide coverage, tackling the challenges posed by reduced contact areas and increasing aspect ratios. Endura Cirrus HTX PVD: The HTX TiN resolves hardmask extension difficulties in next-gen devices. This system generates a hardmask, securing precise pattern replication beyond the 10nm node. Endura Clover MRAM PVD: The Endura CuBS (Copper Barrier/Seed) RF XT PVD system serves logic and memory applications at the 3x/2x node and beyond. Endura CuBS RF XT PVD: The Endura CuBS (Copper Barrier/Seed) RF XT PVD system is made for logic and memory applications from the 3x/2x node and onwards. Endura ILB PVD/ALD: The Endura iLB PVD/ALD system, equipped with Centinel chambers, tackles the increasing contact resistance issue as dimensions decrease and the integrated liner/barrier (iLB) thickness becomes a more substantial portion of the tungsten plug volume. Endura Impulse PCRAM PVD: The Endura Impulse PVD system is an integrated materials solution designed for high-volume manufacturing (HVM) of phase-change random-access memory (PCRAM) and resistive random-access memory (ReRAM) devices. Endura Ioniq W PVD: The Applied Endura Ioniq PVD system is an integrated materials solution enabling the metallization of pure tungsten (W) across various contact applications. It substitutes the high-resistivity method involving a titanium-nitride liner, a W nucleation layer, and bulk W fill using a single PVD W layer integrated with bulk CVD W fill. Endura PVD: The Endura platform is a metallization system in semiconductor industry and Its deposition capacities encompass front-end metallization like cobalt and tungsten, aluminum and copper interconnects, and packaging applications such as underbump metallization. Endura Underbump: It offers solutions for UBM and bond pad encompassing NiV, Cu, Ti, TiW, CuCr, TaN, and AI. Leveraging its advanced interconnect structures and electrostatic chuck and preclean technologies. Endura Ventura PVD: The Endura Ventura PVD system allows customers to expand their 2D damascene integration infrastructure and expertise to TSVs with aspect ratios of ≥10:1 and 2.5D interposer applications. Endura Versa XLR2 W PVD: The Versa XLR2 W PVD chamber minimizes interconnect resistance by depositing a purer and smoother tungsten film, exhibiting resistivity levels 10-15% lower compared to tungsten deposited through current technology. Endura Volta Cobalt CVD: The Endura Volta CVD Cobalt system has ultra-thin seed-enhancing liners and selective cap layers, each less than 20Å thick, enhancing interconnect yield and reliability at the 2Xnm node and beyond. Endura Volta Selective W CVD: The Applied Endura Volta Selective W CVD system combines surface treatment chambers with selective tungsten deposition chambers, mitigating these adverse effects. Endura Volta W CVD: The CVD W film in Volta reduces contact resistance, potentially by up to 90%, based on critical dimensions and process flow. This enhances device power delivery, performance, and efficiency while extending the W middle-of-line interconnect plug for future-generation devices.

Charger UBM PVD: The Charger UBM PVD system used for UBM, RDL, and CMOS image sensor applications, its linear design boosts wafer output compared to other systems, offering the utmost productivity.

Axcela PVD: Axcela PVD system maintains non-uniformities of <2% 1σ. made for cost-efficiency and effortless maintenance when dealing with thick films up to 8µm, each sputter chamber boasts the capacity to deposit three distinct materials, offering the flexibility of co-sputtering for increased deposition rates.