Canon Inc.

FPA-6300ES6a: Processing time was reduced by speeding up the exposure process with a new-design Reticle and Wafer Stages, by improving alignment sequences and wafer handling time reduction. The throughput of the FPA-6300ES6a is over *200 wph (wafers per hour) which is 1.6 times higher productivity than previous FPA-6000ES6a model scanners., FPA-6300ESW: By changing the projection lens magnification (4:1 to 3.125:1), FPA-6300ESW scanners realize a wider exposure field with the reticle size remaining at 6 inches. The FPA-6300ESW is the KrF scanner that can expose a full-size CMOS image sensor without *stitching because 33 mm x 42.2 mm can be exposed in one shot., FPA-3030EX6: Equipped with the same Wafer Feeding System as the proven FPA-3030i5+ i-line stepper, the FPA-3030EX6 supports the handling of substrates of various materials, sizes and thicknesses used for manufacturing IoT and power devices.

FPA-5550iZ2: FPA-5550iZ2 steppers optimize alignment, exposure and wafer transfer sequences, shorten wafer lot exchange times and speed up measurement and calibration processing to reduce wafer processing times., FPA-5550iX: The FPA -5550 iX utilizes the same projection lens used by its predecessor model, the FPA -5510 iX (released in September 2015) which enables a high resolution of 0.5μm., FPA-3030i5a: The FPA-3030i5a can be equipped with a handling system that enables the selection of wafer diameters from 50mm (2inch) to 200mm (8inch) to support a variety of different compound semiconductor wafer sizes and materials., FPA-3030iWa: It consists of a 52 mm x 52 mm wide-field projection lens with a variable numerical aperture (NA) ranging from 0.16 to 0.24 delivers a large depth of focus (DOF) and enabling both high-precision exposure and creation of line width patterns with high uniformity., FPA-5520iV: FPA-5520iV steppers have functions designed for processing of reconstituted FOWLP Wafers that consist of individual die that are mounted and encapsulated onto a carrier substrate for further processing., FPA-8000iW: It offers wide exposure field (52 mm x 68 mm or 55 mm x 55 mm) and a high resolution of 1.0 μm is available across the wide exposure field.

FPA-1200NZ2C: Lithography is done by mask imprinted with the circuit pattern on the resist on the wafer like a stamp. Because its circuit pattern transfer process does not go through an optical mechanism, fine circuit patterns on the mask can be faithfully reproduced on the wafer. Thus, complex two- or three-dimensional circuit patterns can be formed in a single imprint*1, which may reduce the cost of ownership (CoO).