Qorvo Inc.

SiC Schottky Diodes: It offers good surge ratings (IFSM), zero reverse recovery charge and a maximum junction temperature of 175°C. These devices are suitable for high-frequency, high-efficiency power systems that require minimal cooling. UJ3D06504TS UJ3D06506TS UJ3D06508TS UJ3D06510TS SiC JFETs and Combo-FETs: These SiC-based JFETs offer high-performance low gate charges, reducing conduction and switching losses. The SiC Combo-FET combines the SiC JFET with a Si MOSFET in a compact package, offering a 25% size reduction. These devices are capable of working at an operating temperature of up to 175°C. UF4SC120009K4SH UF3C065030B3 UF3C065030K3S UF3C065030K4S UG4SC075006K4S UG4SC075009K4S UG3SC120009K4S UG4SC075005L8S