| Semiconductor Devices for High-Temperature Applications: Market Opportunities (SMC114B) |
| Silicon Carbide Power Modules |
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These are based on SiC and are designed to meet customer-specific system requirements, offering packages that deliver best-in-class SiC performance. It operates at a temperature of up to 175oC. It caters to multiple applications such as motor drives and traction drives, vehicle fast chargers, automotive test equipment and others.
EAB450M12XM3,
CAB450M12XM3,
CAB425M12XM3,
CAB320M17XM3,
CAB400M12XM3 |
| Discrete Silicon Carbide MOSFETs |
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SiC MOSFETs allow for higher switching frequencies, reducing the size of components such as inductors, capacitors, filters and transformers. These SiC MOSFETs replace silicon devices to lower switching and conduction losses while offering higher blocking voltages and avalanche capabilities. It operates at a temperature of up to 175oC. It caters to multiple applications such as EV charging, solar PV inverters, uninterruptable power supplies (UPS), SMPS, DC/DC converters and others.
C3M0025065L,
C3M0025065J1,
C3M0025065D,
C3M0025065K,
C3M0045065L,
C3M0045065J1 |
| Bare Die Silicon Carbide MOSFETs |
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These bare die MOSFETs offer low specific on-resistance over temperature, enabling system-level customization and maximizing power density. These devices ensure prominent design, thorough qualification, screening and parametric characterization. It can operate at a temperature of up to 175oC. It caters to various applications such as industrial power supplies, server/telecom, EV-charging systems, UPS, battery management systems and others.
CPM3-0650-0015A,
CPM3-0650-0045A,
CPM3-0650-0060A,
EPM3-0750-0010D,
CPM3-0900-0010A |
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