AIXTRON

AIX 2800G4-TM (IC2): Single wafer rotation combining batch chamber productivity with single chamber tunability, automated satellite loading at high temperature–highest throughput, lowest particles., AIX G5 WW C: Prominent epitaxial layer quality in batch configuration for single wafer performance., Automation tailored for Si fab, bolstering the SiC power market upsurge., AIX G5+ C: Minimized wafer curvature due to minimal vertical temperature gradients; enables the use of Si wafers with standard thickness.

G10-SiC: 150-millimeter and 200-millimeter dual-wafer size capable., G10-AsP: Compatible with current and future wafer sizes; 75-millimeter, 100-millimeter, 150-millimeter and 200-millimeter; optional SMIF port vacuum cassette; elevators for 2 x 25 wafer cassettes., G10-GaN: 150-millimeter and 200-millimeter high-throughput epitaxy for GaN power and RF applications.