Tower Semiconductor

History

Year	Detail
1993	Tower Semiconductor was founded after National Semiconductor acquired its 150mm wafer fabrication facility in Migdal Haemek, Israel.
2008	Tower acquired Jazz Semiconductor’s 200mm facility (Fab 3), which increased global capacity and offered a more comprehensive technology portfolio, a more extensive customer base, and a more robust financial base.
2014	TowerJazz completed a joint venture with Panasonic Corp., enabling TowerJazz to offer its customers 300mm technology, which comprises 65nm CMOS image sensor dark current and quantum efficiency performance and 45nm digital technology. This adds an available capacity of approximately 800,000 wafers yearly in three manufacturing facilities in Japan.
2016	TowerJazz acquired Maxim Integrated’s 8-inch wafer fabrication facility in San Antonio, Texas, United States, to accelerate production by approximately 28,000 wafers monthly.
2021	Tower partnered with ST Microelectronics to accelerate the Agrate, Italy 300mm analog and power fab capacity.
2023	Intel Foundry Services (IFS) and Tower announced an agreement under which Intel will provide foundry services and 300mm manufacturing capacity to help Tower serve its customers globally. Tower will utilize Intel’s advanced manufacturing facility in New Mexico.